MJD122_11 Datasheet, PDF (5/7 Pages) ON Semiconductor – Complementary Darlington Power Transistor

MJD122 (NPN)
R_B & R_C VARIED TO OBTAIN DESIRED CURRENT LEVELS
 D₁, MUST BE FAST RECOVERY TYPE, e.g.:
  1N5825 USED ABOVE I_B ≈ 100 mA
  MSD6100 USED BELOW I_B ≈ 100 mA
V₂
APPROX
TUT
R_B
V_CC
- 30 V
R_{C SCOPE}
+ 8 V
0
51 D1
≈ 8 k ≈ 120
V₁
APPROX
-12 V
+4V
25 ms
t_r, t_f ≤ 10 ns
DUTY CYCLE = 1%
FOR t_d AND t_r, D₁ IS DISCONNECTED
AND V₂ = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
Figure 9. Switching Times Test Circuit
5
3
t_s
PNP
NPN
2
1
t_f
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.1
V_CC = 30 V
I_C/I_B = 250
I_B1 = I_B2
T_J = 25°C
0.2 0.3
t_d @ V_BE(off) = 0 V
0.5 0.7 1
2
t_r
3 5 7 10
I_C, COLLECTOR CURRENT (AMP)
Figure 10. Switching Times
1
0.7 _{D = 0.5}
0.5
0.3
0.2
0.2
0.1
0.1 ^0.05
0.07 _0.01
0.05
0.03 _{SINGLE PULSE}
0.02
0.01
0.01 0.02 0.03 0.05 0.1
R_qJC(t) = r(t) R_qJC
R_qJC = 6.25°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) - T_C = P_(pk) q_JC(t)
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
0.2 0.3 0.5
1
2 3 5 10
t, TIME OR PULSE WIDTH (ms)
20 30 50
Figure 11. Thermal Response
100 200 300 500 1000
20
15
10
5
3
2
1
T_J = 150°C
500 m
σ
100 m
σ
1 ms
5 ms
0.5
0.3
0.2
0.1
0.05
0.03
0.02
1
BONDING WIRE LIMIT
THERMAL LIMIT
T_C = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED V_CEO
2 3 5 7 10
20 30
dc
50 70 100
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 12. Maximum Forward Bias
Safe Operating rea
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 12 is based on T_J(pk) = 150_C; T_C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T_J(pk)
< 150_C. T_J(pk) may be calculated from the data in
Figure 11. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
http://onsemi.com
5