MC33178_06 Datasheet, PDF (5/19 Pages) ON Semiconductor – Low Power, Low Noise Operational Amplifiers

MC33178, MC33179
AC ELECTRICAL CHARACTERISTICS (V_CC = +15 V, V_EE = −15 V, T_A = 25°C, unless otherwise noted.)
Characteristics
Figure
Symbol Min
Typ
Max Unit
Slew Rate
(V_in = −10 V to +10 V, R_L = 2.0 kW, C_L = 100 pF, A_V = +1.0 V)
Gain Bandwidth Product (f = 100 kHz)
17, 32
18
SR
GBW
1.2
2.0
2.5
5.0
V/ms
−
−
MHz
AC Voltage Gain (R_L = 600 W, V_O = 0 V, f = 20 kHz)
Unity Gain Bandwidth (Open−Loop) (R_L = 600 W, C_L = 0 pF)
Gain Margin (R_L = 600 W, C_L = 0 pF)
Phase Margin (R_L = 600 W, C_L = 0 pF)
Channel Separation (f = 100 Hz to 20 kHz)
19, 20
A_VO
BW
21, 23, 24
A_m
22, 23, 24
f_m
25
CS
−
50
−
dB
−
3.0
−
MHz
−
15
−
dB
−
60
−
Deg
−
−120
−
dB
Power Bandwidth (V_O = 20 V_pp, R_L = 600 W, THD ≤ 1.0%)
Total Harmonic Distortion (R_L = 600 W,, V_O = 2.0 V_pp, A_V = +1.0 V)
26
(f = 1.0 kHz)
(f = 10 kHz)
(f = 20 kHz)
BW_p
THD
−
32
−
kHz
%
−
0.0024
−
−
0.014
−
−
0.024
−
Open Loop Output Impedance
(V_O = 0 V, f = 3.0 MHz, A_V = 10 V)
Differential Input Resistance (V_CM = 0 V)
Differential Input Capacitance (V_CM = 0 V)
Equivalent Input Noise Voltage (R_S = 100 W,)
f = 10 Hz
f = 1.0 kHz
27
|Z_O|
W
−
150
−
R_in
−
200
−
kW
C_in
−
10
−
pF
28
e_n
nV/√ Hz
−
8.0
−
−
7.5
−
Equivalent Input Noise Current
f = 10 Hz
f = 1.0 kHz
29
i_n
pA/ √ Hz
−
0.33
−
−
0.15
−
2400
2000 MC33178P/9P
1600
MC33179D
1200
800 _MC33178D
400
0
−60 −40 −20 0 20 40 60 80 100 120 140 160 180
T_A, AMBIENT TEMPERATURE (°C)
Figure 2. Maximum Power Dissipation
versus Temperature
4.0
3.0
2.0
1.0
0
−1.0
−2.0
−3.0
−4.0
−55
Unit 1
Unit 2
Unit 3
V_CC = +15 V
V_EE = −15 V
R_S = 10 W
V_CM = 0 V
−25 0
25
50
75 100 125
T_A, AMBIENT TEMPERATURE (°C)
Figure 3. Input Offset Voltage versus
Temperature for 3 Typical Units
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