CM1636 Datasheet, PDF (5/22 Pages) ON Semiconductor – 4-, 6- and 8-Channel EMI Filter Arrays with ESD Protection

CM1636
ELECTRICAL OPERATING CHARACTERISTICS ^{(SEE NOTE 1)}
SYMBOL PARAMETER
R
Resistance
CONDITIONS
MIN
160
C
Total Channel Capacitance
TOTAL
At 2.5VDC Reverse Bias, 1MHz, 24
30mVAC
C
Capacitance
At 2.5V DC, 1MHz, 30mV AC
V_DIODE
I_LEAK
Diode Standoff Voltage
Diode Leakage Current (reverse
bias)
I = 10μA
DIODE
V_DIODE = 3.3V
V_SIG
Signal Voltage
Positive Clamp
I_LOAD = 10mA
5.6
Negative Clamp
I_LOAD = -10mA
-0.4
V
In-system ESD Withstand Voltage Notes 2
ESD
a) Human Body Model, MIL-STD-
±30
883, Method 3015
b) Contact Discharge per IEC
±15
61000-4-2 Level 4
f
C
A
1GHz
Cut-off Frequency
Z =50Ω, Z =50Ω
SOURCE
LOAD
R = 200Ω, C = 15pF;
Note 3
Absolute Attenuation @ 1GHz from Z = 50Ω, Z = 50Ω,
SOURCE
LOAD
0dB Level
DC Bias = 0V; Notes 1 and 3
A
Absolute Attenuation @ 800MHz to
800MHz - 6GHz
Z_SOURCE = 50Ω, Z _LOAD = 50Ω,
6GHz from 0dB Level
DC Bias = 0V; Notes 1 and 35
TYP MAX UNITS
200
240
Ω
30
36
pF
15
pF
6.0
V
0.1
1
μA
6.8
V
-0.8
V
kV
kV
100
MHz
35
dB
30
dB
Note 1: T_A=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Attenuation / RF curves characterized by a network analyzer using microprobes.
Rev. 2 | Page 5 of 22 | www.onsemi.com