CM1631 Datasheet, PDF (5/22 Pages) ON Semiconductor – LCD and Camera EMI Filter Array with ESD Protection

CM1631
ELECTRICAL OPERATING CHARACTERISTICS ^{(SEE NOTE1)}
SYMBOL PARAMETER
R
Resistance
CONDITIONS
MIN TYP MAX UNITS
80 100 120
Ω
C
Total Channel Capacitance
TOTAL
At 2.5VDC Reverse Bias, 1MHz, 24 30
36
pF
30mVAC
C
Capacitance C
At 2.5VDC Reverse Bias, 1MHz, 12 15
18
pF
30mVAC
V_DIODE
I_LEAK
V_SIG
Standoff Voltage
Diode Leakage Current (reverse bias)
Signal Clamp Voltage
Positive Clamp
Negative Clamp
I =10μA
DIODE
V = _DIODE 3.3V
I_LOAD = 10mA
I_LOAD = -10mA
6.0
V
0.1 1.0
μA
5.6 6.8
V
-0.4 -0.8
V
V
In-system ESD Withstand Voltage
ESD
Note 2
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-
2 Level 4
±30
kV
±15
kV
R
DYN
f
C
A
1GHz
Dynamic Resistance
Positive
Negative
Cut-off Frequency
Z =50Ω, Z =50Ω
SOURCE
LOAD
Channel R = 100Ω,
Channel C = 15pF
Absolute Attenuation @ 1GHz from 0dB Z = 50Ω, Z = 50Ω,
SOURCE
LOAD
Level
DC Bias = 0V; Notes 1 and 3
2.3
Ω
0.9
Ω
110
MHz
35
dB
A
Absolute Attenuation @ 800MHz to
800MHz - 6GHz
6GHz from 0dB Level
Z_SOURCE = 50Ω, Z _LOAD = 50Ω,
DC Bias = 0V; Notes 1 and 3
30
dB
Note 1: T_A=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Attenuation / RF curves characterized by a network analyzer using microprobes.
Rev. 0 | Page 5 of 22 | www.onsemi.com