CM1436 Datasheet, PDF (5/16 Pages) California Micro Devices Corp – 4 and 8 Channel EMI Filter Arrays with ESD Protection

CM1436
ELECTRICAL OPERATING CHARACTERISTICS ^{(SEE NOTE 1)}
SYMBOL PARAMETER
R
Resistance
CONDITIONS
C
Capacitance
At 2.5V DC, 1MHz, 30mV AC
V_DIODE
I_LEAK
Diode Standoff Voltage
Diode Leakage Current (reverse
bias)
I_DIODE = 10µA
V_DIODE = 3.3V
V_SIG
Signal Voltage
Positive Clamp
Negative Clamp
I_LOAD = 10mA
I_LOAD = -10mA
V_ESD In-system ESD Withstand Voltage Note 2
a) Human Body Model, MIL-STD-
883, Method 3015
b) Contact Discharge per IEC
61000-4-2 Level 4
f
C
A
1GHz
Cut-off Frequency
Z_SOURCE=50Ω, Z_LOAD=50Ω
R = 200Ω, C = 15pF;
Absolute Attenuation @ 1GHz from Z_SOURCE = 50Ω, Z _LOAD = 50Ω,
0dB Level
DC Bias = 0V; Notes 1
A
Absolute Attenuation @ 800MHz to
800MHz - 6GHz
Z_SOURCE = 50Ω, Z _LOAD = 50Ω,
6GHz from 0dB Level
DC Bias = 0V; Notes 1 and 3
MIN TYP MAX UNITS
160
200
240
Ω
12
15
18
pF
6.0
V
0.1
1
µA
5.6
6.8
9.0
V
-0.4
-0.8
-1.5
V
±30
kV
±15
kV
100
MHz
35
dB
30
dB
Note 1: T_A=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Attenuation / RF curves characterized by a network analyzer using microprobes.
Rev. 2 | Page 5 of 16 | www.onsemi.com