CM1420-22 Datasheet, PDF (5/15 Pages) ON Semiconductor – LCD EMI Filter Array with ESD Protection

CM1420-22
ELECTRICAL OPERATING CHARACTERISTICS¹
SYMBOL PARAMETER
R
Resistance
CONDITIONS
C
Capacitance
At 2.5V DC, 1MHz, 30mV
AC
V
DIODE
I_LEAK
V
SIG
Diode Standoff Voltage
Diode Leakage Current (reverse bias)
Signal Voltage
Positive Clamp
Negative Clamp
I_DIODE=10μA
V = _DIODE 3.3V
I = 10mA;
LOAD
Note 3
V
In-system ESD Withstand Voltage
ESD
Note 2
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
Level 4
R
Dynamic Resistance
DYN
Positive
Negative
f
Cut-off Frequency
C
Z_SOURCE=50Ω, Z_LOAD=50Ω
R=100Ω, C=15pF
MIN TYP
80 100
12 15
6.0
100
5.6 6.8
-1.5 -0.8
±30
±15
2.30
0.90
120
MAX
120
18
200
9.0
-0.4
UNITS
Ω
pF
V
nA
V
V
kV
kV
Ω
Ω
MHz
Note 1: T_A=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin
A1, then clamping voltage is measured at Pin C1.
Rev. 3 | Page 5 of 15 | www.onsemi.com