CM1400-03 Datasheet, PDF (5/14 Pages) California Micro Devices Corp – 6 Channel EMI Filter Array with ESD Protection

CM1400-03
ELECTRICAL OPERATING CHARACTERISTICS ^{(SEE NOTE1)}
SYMBOL PARAMETER
R
Resistance
CONDITIONS
C
Capacitance
At 2.5V DC
TCR Temperature Coefficient of Resistance
TCC Temperature Coefficient of Capacitance At 2.5V DC
V_DIODE
I_LEAK
V_SIG
Diode Voltage (reverse bias)
Diode Leakage Current (reverse bias)
Signal Voltage
Positive Clamp
Negative Clamp
I =10μA
DIODE
V_DIODE=3.3V
I_LOAD = 10mA
V_ESD In-system ESD Withstand Voltage
Note 2
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
Level 4
V_CL
Clamping Voltage during ESD Discharge Notes 2 and 3
MIL-STD-883 (Method 3015), 8kV
Positive Transients
Negative Transients
f
Cut-off Frequency
C
Z_SOURCE=50Ω, Z_LOAD=50Ω
R=100Ω, C=30pF
MIN TYP
80 100
24 30
1200
-300
6.0
MAX
120
36
100
UNITS
Ω
pF
ppm/°C
ppm/°C
V
nA
5.6 6.8
9.0
V
-1.5 -0.8
-0.4
V
±30
kV
±15
kV
+10
V
-5
V
58
MHz
Note 1: T_A=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin
A1, then clamping voltage is measured at Pin C1.
Rev. 3 | Page 5 of 14 | www.onsemi.com