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CM1241 Datasheet, PDF (5/12 Pages) ON Semiconductor – 4-Channel Low Capacitance Dual-Voltage ESD Protection Array | |||
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CM1241
ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE 1)
SYMBOL PARAMETER
VF
LV Diode Reverse Voltage
(Positive Voltage)
LV Diode Forward Voltage
(Negative Voltage)
ILEAK
LV Channel Leakage Current
(Pins 1 and 2)
CONDITIONS
IF = 10mA; TA= 25°C
IF = 10mA; TA= 25°C
TA= -30°C to 65°C; VIN= 3.3V,
VN=0V
MIN
6.8
â1.05
TYP MAX UNITS
8.2 9.2
V
â0.9 â0.6
V
100 nA
LV Channel Leakage Current
(Pin 3 only)
CIN
LV Channel Input Capacitance
TA= -30°C to 65°C; VIN=3.3V,
VN=0V
At 1 MHz, VN=0V, VIN=1.65V
100 nA
1.2 1.5
pF
âCIN
LV Channel Input Capacitance
Matching
ILEAK_HV
CIN_HV
HV Channel Leakage Current
HV Channel Input Capacitance
At 1 MHz, VN=0V, VIN=1.65V
TA=25°C; VCC=11V, VN=0V
At 1 MHz, VN=0V, VIN=2.5V
0.02
pF
0.1 1.0
µA
53
pF
VF_HV
VESD
VCL
RDYN
HV Diode Breakdown Voltage
Positive Voltage
IF = 10mA; TA=25°C
ESD Protection
Peak Discharge Voltage at any
channel input, in system
Contact discharge per
IEC 61000-4-2 standard
TA=25°C
LV Channel Clamp Voltage (Pin 1-3)
Positive Transients
Negative Transients
TA=25°C, IPP = 1A,
tP = 8/20µS
Dynamic Resistance
LV Channel Positive Transients
LV Channel Negative Transients
HV Channel Positive Transients
HV Channel Negative Transients
IPP = 1A, tP = 8/20µS
Any I/O pin to Ground
14.6
17.7
V
±8 (Pin 1-3)
kV
±15 (Pin 4)
kV
+9.64
V
â1.75
V
0.72
â¦
0.59
â¦
1.20
â¦
0.36
â¦
Note 1: All parameters specified at TA = â40°C to +85°C unless otherwise noted.
Rev. 3 | Page 5 of 14 | www.onsemi.com
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