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CM1234_14 Datasheet, PDF (5/9 Pages) ON Semiconductor – ESD Clamp Array for High Speed Data Line Protection
CM1234
Specifications
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Units
Operating Temperature Range
−40 to +85
°C
Storage Temperature Range
−65 to +150
°C
Breakdown Voltage (Positive)
6
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 2. ELECTRICAL OPERATING CHARACTERISTICS
(All parameters specified at TA = –40°C to +85°C unless otherwise noted.)
Symbol
Parameter
Conditions
Min Typ Max Units
VIN
I/O Voltage Relative to GND
IIN
Continuous Current through signal pins
(IN to OUT) 1000 Hr
−0.5
5.5
V
100
mA
IF
VESD
Channel Leakage Current
ESD Protection − Peak Discharge Voltage
at any channel input, in system:
a) Contact discharge per
IEC 61000−4−2 Standard
and
b) Air discharge per
IEC 61000−4−2 Standard
TA = 25°C; VN = 0 V, VTEST = 5 V
TA = 25°C
TA = 25°C
0.1
1.0
mA
kV
±15
±20
IRES
Residual ESD Peak Current on RDUP
IEC 61000−4−2 8 kV;
(Resistance of Device Under Protection)
RDUP = 5 W, TA = 25°C
VCL
Channel Clamp Voltage
(Channel clamp voltage per
IEC 61000−4−5 Standard)
Positive Transients
Negative Transients
IPP = 1 A, TA = 25°C,
tP = 8/20 mS
2.5
A
V
+9
−1.5
RDYN
Dynamic Resistance
Positive Transients
Negative Transients
IPP = 1 A, TA = 25°C,
tP = 8/20 mS
W
0.44
0.38
Zo
Differential Channels pair
characteristic impedance
TR = 200 ps
100
W
DZo
Channel−to−Channel Impedance Match
(Differential)
TR = 200 ps
2
%
ZCHANNEL Individual Channel Characteristic Imped-
ance in Single−ended Connection
TR = 200 ps
50
W
DZCHANNEL Channel−to−Channel Impedance Match
(Individual)
TR = 200 ps
2
%
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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