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CM1223 Datasheet, PDF (5/19 Pages) California Micro Devices Corp – Industry First Low Capacitance ESD Protection Arrays w/Backdrive Protection
CM1223
ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE 1)
SYMBOL PARAMETER
CONDITIONS
VP
Operating Supply Voltage (VP-VN)
IP
Operating Supply Current
(VP-VN)=3.3V
VSCL Signal Clamp Voltage
Positive Transients
Negative Transients
IF = 8mA; TA=25°C
ILEAK
Channel Leakage Current
CIN
Channel Input Capacitance
TA=25°C; VP=5V, VN=0V
At 1 MHz, VP=3.3V, VN=0V, VIN=1.65V
MIN TYP MAX UNITS
3.3 5.5
V
8.0 µA
6.7 8.2
V
0.60 0.80
V
±0.1 ±1.0 µA
1.0 1.5 pF
∆CIN
Channel Input Capacitance
Matching
At 1 MHz, VP=3.3V, VN=0V, VIN=1.65V
0.02
pF
CMUTUAL Mutual Capacitance between
At 1 MHz, VP=3.3V, VN=0V, VIN=1.65V
signal pin and adjacent signal pin
0.11
pF
VESD
ESD Protection
Peak Discharge Voltage at any
channel input, in system
a) Contact discharge per TA=25°C; Notes 3 and 4
±8
kV
IEC 61000-4-2 standard
b) Human Body Model,
TA=25°C; Notes 2 and 4
±15
kV
MIL-STD-883, Method
3015
VCL
Channel Clamp Voltage
Positive Transients
Negative Transients
TA=25°C, IPP = 1A, tP = 8/20µS;
Note 4
+8.8
V
-1.4
V
RDYN Dynamic Resistance
Positive Transients
Negative Transients
TA=25°C, IPP = 1A, tP = 8/20µS
Any I/O pin to Ground; Note 4
0.7
Ω
0.4
Ω
Note 1: All parameters specified at TA = -40°C to +85°C unless otherwise noted.
Note 2: Human Body Model per MIL-STD-883, Method 3015, CDischarge = 100pF, RDischarge = 1.5KΩ, VP = 3.3V, VN grounded.
Note 3: Standard IEC 61000-4-2 with CDischarge = 150pF, RDischarge = 330Ω, VP = 3.3V, VN grounded.
Note 4: These measurements performed with no external capacitor on VP (VP floating).
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