CM1213 Datasheet, PDF (5/17 Pages) California Micro Devices Corp – 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays

CM1213
ELECTRICAL OPERATING CHARACTERISTICS^{(SEE NOTE 1)}
SYMBOL PARAMETER
CONDITIONS
V_P
Operating Supply Voltage (V_P-V_N)
I_P
Operating Supply Current
(V_P-V_N)=3.3V
V_F
Diode Forward Voltage
Top Diode
Bottom Diode
I_F = 8mA; T_A=25°C
I_LEAK
Channel Leakage Current
C_IN
Channel Input Capacitance
T_A=25°C; V_P=5V, V_N=0V
At 1 MHz, V_P=3.3V, V_N=0V, V_IN=1.65V;
MIN TYP MAX UNITS
3.3 5.5
V
8.0 µA
0.60 0.80 0.95 V
0.60 0.80 0.95 V
±0.1 ±1.0 µA
1.0 1.5 pF
∆C_IN
Channel Input Capacitance
Matching
At 1 MHz, V_P=3.3V, V_N=0V, V_IN=1.65V;
0.02
pF
C_MUTUAL Mutual Capacitance between
At 1 MHz, V_P=3.3V, V_N=0V, V_IN=1.65V;
signal pin and adjacent signal pin
0.11
pF
V_ESD
ESD Protection
Peak Discharge Voltage at any
channel input, in system
Contact discharge per
Notes 3 and 4; T_A=25°C
±8
kV
IEC 61000-4-2 standard
V_CL
Channel Clamp Voltage
Positive Transients
Negative Transients
T_A=25°C, I_PP = 1A, t_P = 8/20uS;
Note 4
+8.8
V
-1.4
V
R_DYN Dynamic Resistance
Positive Transients
Negative Transients
I_PP = 1A, t_P = 8/20uS
Any I/O pin to Ground; Note 4
0.7
Ω
0.4
Ω
Note 1: All parameters specified at T_A = -40°C to +85°C unless otherwise noted.
Note 2: Human Body Model per MIL-STD-883, Method 3015, C_Discharge = 100pF, R_Discharge = 1.5KΩ, V_P = 3.3V, V_N grounded.
Note 3: Standard IEC 61000-4-2 with C_Discharge = 150pF, R_Discharge = 330Ω, V_P = 3.3V, V_N grounded.
Note 4: These measurements performed with no external capacitor on V_P (V_P floating).
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