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CAT28C64BP-20 Datasheet, PDF (5/13 Pages) ON Semiconductor – 64K-Bit CMOS PARALLEL EEPROM
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CAT28C64B
A.C. CHARACTERISTICS, Read Cycle
VCC = 5V ±10%, unless otherwise specified.
28C64B-90
Symbol Parameter
Min. Max.
tRC
Read Cycle Time
90
tCE
CE Access Time
90
tAA
Address Access Time
90
tOE
OE Access Time
50
tLZ(1)
CE Low to Active Output
0
tOLZ(1)
OE Low to Active Output
0
tHZ(1)(2) CE High to High-Z Output
50
tOHZ(1)(2) OE High to High-Z Output
50
tOH(1)
Output Hold from Address Change 0
28C64B-12
Min. Max.
120
120
120
60
0
0
50
50
0
28C64B-15
Min. Max.
150
150
150
70
0
0
50
50
0
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Figure 1. A.C. Testing Input/Output Waveform(3)
VCC - 0.3V
0.0 V
INPUT PULSE LEVELS
2.0 V
0.8 V
REFERENCE POINTS
Figure 2. A.C. Testing Load Circuit (example)
DEVICE
UNDER
TEST
1.3V
1N914
3.3K
OUT
CL = 100 pF
CL INCLUDES JIG CAPACITANCE
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) Output floating (High-Z) is defined as the state when the external data line is no longer driven by the output buffer.
(3) Input rise and fall times (10% and 90%) < 10 ns.
© 2009 SCILLC. All rights reserved.
5
Characteristics subject to change without notice
Doc. No. MD-1011, Rev. I
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