BUH50 Datasheet, PDF (5/10 Pages) Motorola, Inc – POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS

3000
2500
2000
1500
1000
500
0
1
TYPICAL SWITCHING CHARACTERISTICS
BUH50
TJ = 125°C
TJ = 25°C
IBoff = IC/2
VCC = 125 V
PW = 20 µs
4000
TJ = 125°C
TJ = 25°C
IBoff = IC/2
VCC = 125 V
3000
PW = 20 µs
IC/IB = 5
2000
IC/IB = 3
1000
IC/IB = 3
2
3
4
5
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Resistive Switching, ton
IC/IB = 5
0
1
2
3
4
5
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Resistive Switch Time, toff
4000
IBoff = IC/2
VCC = 15 V
3000
IC/IB = 3
VZ = 300 V
LC = 200 µH
2000
1000
TJ = 125°C
TJ = 25°C
0
1
2
IC/IB = 5
3
4
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Inductive Storage Time, tsi
300
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
200
tc
100
tfi
TJ = 125°C
TJ = 25°C
0
1
2
3
4
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Inductive Storage Time,
tc & tfi @ IC/IB = 3
TYPICAL CHARACTERISTICS
250
tc
TJ = 125°C
TJ = 25°C
200
150
100
IBoff = IC/2
50 VCC = 15 V
VZ = 300 V
tfi
0 ^{LC = 200 µH}
1
2
3
4
IC, COLLECTOR CURRENT (AMPS)
Figure 13. Inductive Switching, tc & tfi @ IC/IB = 5
4000
TJ = 125°C
TJ = 25°C
3000
IC = 1 A
2000
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
1000
IC = 2 A
0
3
4
5
6
7
8
9
10
hFE, FORCED GAIN
Figure 14. Inductive Storage Time
Motorola Bipolar Power Transistor Device Data
5