BTA25-600CW3G Datasheet, PDF (5/6 Pages) ON Semiconductor – Silicon Bidirectional Thyristors

BTA25−600CW3G, BTA25−800CW3G
25
20
Q3
Q1
15
Q2
10
V_D = 12 V
R_I = 30 W
5
0
−40 −25 −10 5 20 35 50 65 80 95 110 125
T_J, JUNCTION TEMPERATURE (°C)
Figure 6. Gate Trigger Current Variation
1.3
1.1
V_D = 12 V
Q1
R_I = 30 W
0.9
Q3
0.7
Q2
0.5
0.3
0.1
−40 −25 −10 5 20 35 50 65 80 95 110 125
T_J, JUNCTION TEMPERATURE (°C)
Figure 7. Gate Trigger Voltage Variation
5000
V_D = 800 Vpk
4K
T_J = 125°C
3K
2K
1K
0
10
100
1000
10000
R_G, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential Waveform)
80
70
Q2
60
Q1
50
Q3
40
V_D = 12 V
R_I = 30 W
30
20
−40 −25 −10 5 20 35 50 65 80 95 110 125
T_J, JUNCTION TEMPERATURE (°C)
Figure 9. Latching Current Variation
200 V_RMS
ADJUST FOR
I_TM, 60 Hz V_AC
TRIGGER
CHARGE
CHARGE
CONTROL
NON‐POLAR
C_L
L_L
MEASURE
I
MT2
1N914 _{51 W}
MT1
G
1N4007
-
200 V
+
Note: Component values are for verification of rated (di/dt)_c. See AN1048 for additional information.
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)_c
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