BDX53B Datasheet, PDF (5/6 Pages) Motorola, Inc – Plastic Medium-Power Complementary Silicon Transistors

BDX53B BDX53C BDX54B BDX54C
NPN
BDX53B, BDX53C
+ 5.0
v ^{+ 4.0} *IC/IB hFE/3
+ 3.0
+ 2.0
25°C to 150°C
+ 1.0
– 55°C to 25°C
0
– 1.0
*θ_VC for VCE(sat)
– 2.0
– 3.0
θ_VB for VBE
– 4.0
25°C to 150°C
– 55 to 150°C
PNP
BDX54B, BDX54C
+ 5.0
v ^{+ 4.0} *IC/IB hFE/3
+ 3.0
+ 2.0
25°C to 150°C
+ 1.0
– 55°C to 25°C
0
– 1.0
*θ_VC for VCE(sat)
– 2.0
– 3.0
θ_VB for VBE
– 4.0
25°C to 150°C
– 55 to 150°C
– 5.0
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
– 5.0
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients
5.0 7.0 10
105
REVERSE
104
VCE = 30 V
103
FORWARD
105
REVERSE
104
VCE = 30 V
103
FORWARD
102
TJ = 150°C
101
100
100°C
102
TJ = 150°C
101
100°C
100
25°C
10– ¹
25°C
– 0.6 – 0.4 – 0.2
0 + 0.2 + 0.4 + 0.6 + 0.8 + 1.0 + 1.2 + 1.4
10– ¹
+ 0.6 + 0.4 + 0.2 0 – 0.2 – 0.4 – 0.6 – 0.8 – 1.0 – 1.2 – 1.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut–Off Region
NPN
BDX53B
BDX53C
BASE
COLLECTOR
[ [ 8.0 k
120
PNP
BDX54B
BDX54C
COLLECTOR
BASE
[ [ 8.0 k
120
EMITTER
Figure 13. Darlington Schematic
EMITTER
Motorola Bipolar Power Transistor Device Data
5