BD243B_07 Datasheet, PDF (5/6 Pages) ON Semiconductor – Complementary Silicon Plastic Power Transistors

BD243B, BD243C* (NPN) BD244B, BD244C* (PNP)
10³
V_CE = 30 V
10²
T_J = 150°C
10¹
100°C
10⁰
25°C
10^-1 I_C = I_CES
10^-ā2 REVERSE
FORWARD
10^-ā3
-ā0.3 -ā0.2 -ā0.1 0 +ā0.1 +ā0.2 +ā0.3 +ā0.4 +ā0.5 +ā0.6 +ā0.7
V_BE, BASE‐EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut‐Off Region
10^M
V_CE = 30 V
1.0^M
I_C = 10 x I_CES
100^k
I_C = 2 x I_CES
10^k
I_C ≈ I_CES
1.0^k
0.1^k
20
(TYPICAL I_CES VALUES
OBTAINED FROM FIGURE 12)
40
60
80 100
120 140 160
T_J, JUNCTION TEMPERATURE (°C)
Figure 13. Effects of Base-Emitter Resistance
ORDERING INFORMATION
Device
Package
Shipping^†
BD243B
BD243BG
TO-220
TO-220
(Pb-Free)
50 Units / Rail
BD243C
BD243CG
TO-220
TO-220
(Pb-Free)
50 Units / Rail
BD244B
BD244BG
TO-220
TO-220
(Pb-Free)
50 Units / Rail
BD244C
BD244CG
TO-220
TO-220
(Pb-Free)
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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