AMIS-30663 Datasheet, PDF (5/11 Pages) AMI SEMICONDUCTOR – High Speed CAN Transceiver

AMIS−30663
Table 5. Absolute Maximum Ratings
Symbol
Parameter
Conditions
Min.
Max.
Unit
V_CC
V₃₃
V_CANH
V_CANL
V_TxD
V_RxD
VREF
Supply voltage
I/O interface voltage
DC voltage at pin CANH
DC voltage at pin CANL
DC voltage at pin TxD
DC voltage at pin RxD
DC voltage at pin VREF
0 < V_CC < 5.25 V; no time limit
0 < V_CC < 5.25 V; no time limit
−0.3
−0.3
−45
−45
−0.3
−0.3
−0.3
+7
V
+7
V
+45
V
+45
V
V_CC + 0.3
V
V_CC + 0.3
V
VCC + 0.3
V
V_tran(CANH)
V_tran(CANL)
V_tran(VREF)
V_{esd(CANL/CANH)}
Transient voltage at pin CANH
Transient voltage at pin CANL
Transient voltage at pin VREF
Electrostatic discharge voltage at
CANH and CANL pin
(Note 2)
(Note 2)
(Note 2)
(Note 3)
(Note 6)
−150
−150
−150
−8
−500
+150
V
+150
V
+150
V
+8
kV
+500
V
V_esd
Electrostatic discharge voltage at all
other pins
(Note 4)
(Note 6)
−4
−250
+4
kV
+250
V
Latch−up
Static latch−up at all pins
(Note 5)
100
mA
T_stg
Storage temperature
−55
+155
°C
T_amb
Ambient temperature
−40
+125
°C
T_junc
Maximum junction temperature
−40
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Applied transient waveforms in accordance with “ISO 7637 part 3”, test pulses 1, 2, 3a and 3b (see Figure 4).
3. Standardized human body model system ESD pulses in accordance to IEC 1000.4.2.
4. Standardized human body model ESD pulses in accordance to MIL883 method 3015. Supply pin 8 is ±4 kV.
5. Static latch−up immunity: static latch−up protection level when tested according to EIA/JESD78.
6. Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3−1993.
Table 6. Thermal Characteristics
Symbol
Parameter
R_{th(vj−a)}
R_{th(vj−s)}
Thermal resistance from junction to ambient in SO8 package
Thermal resistance from junction to substrate of bare die
Conditions
In free air
In free air
Value
Unit
145
K/W
45
K/W
Table 7. DC Characteristics
(V_CC = 4.75 to 5.25 V; V₃₃ = 2.9 V to 3.6 V; T_junc = −40 to +150°C; R_LT = 60 W unless specified otherwise.)
Symbol
Parameter
Conditions
Min.
Typ.
Supply (pin V_CC and pin V₃₃)
I_CC
Supply current
I₃₃
I/O interface current
Dominant; V_TXD = 0 V
45
Recessive; V_TXD = V_CC
4
V₃₃ = 3.3 V;
C_L = 20 pF; recessive
I₃₃
I/O interface current (Note 7)
V₃₃ = 3.3 V;
C_L = 20 pF; 1 Mbps
Transmitter Data Input (pin TxD)
V_IH
HIGH−level input voltage
V_IL
LOW−level input voltage
I_IH
HIGH−level input current
I_IL
LOW−level input current
7. Not tested on ATE.
Output recessive
Output dominant
V_TxD = V₃₃
V_TxD = 0 V
2.0
−0.3
−1
−50
−
−
0
−200
Max.
Unit
65
mA
8
1
mA
170
mA
V_CC
V
+0.8
V
+1
mA
−300
mA
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