2N4921G_13 Datasheet, PDF (5/6 Pages) ON Semiconductor – Medium-Power Plastic NPN Silicon Transistors

2N4921G, 2N4922G, 2N4923G
1000
700
500
300
200
T_J = 150°C
V_CE = 1.0 V
100
25°C
70
50
- 55°C
30
20
10
2.0 3.0 5.0
10 20 30 50 100 200 300 500 1000 2000
I_C, COLLECTOR CURRENT (mA)
Figure 8. Current Gain
1.0
0.8
I_C = 0.1 A 0.25 A
0.5 A 1.0 A
0.6
T_J = 25°C
0.4
0.2
0
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200
I_B, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
10⁸
10⁷
I_C = 2 x I_CES
10⁶
I_C ≈ I_CES
10⁵
I_C = 10 x I_CES
V_CE = 30 V
I_CES VALUES
10⁴ OBTAINED FROM
FIGURE 12
10³
0
30
60
90
120
150
T_J, JUNCTION TEMPERATURE (°C)
Figure 10. Effects of Base−Emitter Resistance
1.5
T_J = 25°C
1.2
0.9
V_BE(sat) @ I_C/I_B = 10
0.6
V_BE @ V_CE = 2.0 V
0.3
V_CE(sat) @ I_C/I_B = 10
0
2.0 3.0 5.0 10 20 30 50
100 200 300 500 1000 2000
I_C, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltage
10⁴
10³
T_J = 150°C
10²
100°C
25°C
10¹
I_C = I_CES
10⁰
V_CE = 30 V
10^-1
REVERSE
10^- 2
- 0.2 - 0.1 0
FORWARD
+ 0.1 + 0.2 + 0.3 + 0.4 + 0.5
V_BE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut−Off Region
+ 2.5
+ 2.0
+ 1.5
hFE @ VCE  +  1.0 V
*APPLIES FOR I_C/I_B ≤
2
+ 1.0
T_J = 100°C to 150°C
+ 0.5
*q_VC FOR V_CE(sat)
0
- 55°C to +100°C
- 0.5
- 1.0
- 1.5
- 2.0
q_VB FOR V_BE
- 2.5
2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000
I_C, COLLECTOR CURRENT (mA)
Figure 13. Temperature Coefficients
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