|
2N4918_17 Datasheet, PDF (5/6 Pages) ON Semiconductor – Medium-Power Plastic PNP Silicon Transistors | |||
|
◁ |
2N4918 â 2N4920 Series
TYPICAL DC CHARACTERISTICS
1000
700
500
300
TJ = 150°C
200
25°C
100
70
-â55°C
50
30
20
VCE = 1.0 V
1.0
IC = 0.1 A 0.25 A 0.5 A
1.0 A
0.8
0.6
TJ = 25°C
0.4
0.2
10
2.0 3.0 5.0
10 20 30 50 100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
Figure 8. Current Gain
0
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
108
IC = 10 ICES
VCE = 30 V
107
106
IC â ICES
105
IC = 2x ICES
ICES VALUES
104
OBTAINED FROM
FIGURE 13
103
0
30
60
90
120
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Effects of BaseâEmitter Resistance
1.5
1.2
TJ = 25°C
0.9
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2.0 V
0.3
VCE(sat) @ IC/IB = 10
0
2.0 3.0 5.0 10 20 30 50
100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
Figure 11. âOnâ Voltage
102
101
TJ = 150°C
100
10-1
100°C
10-â2
104
103 REVERSE
-â0.2 -â0.1
IC = ICES
25°C
FORWARD
0
+â0.1 +â0.2
VCE = 30 V
+â0.3 +â0.4 +â0.5
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector CutâOff Region
+â2.5
+â2.0
+â1.5
hFEâ@âVCEâ +â 1.0âV
*APPLIES FOR IC/IB <
2
+â1.0
TJ = 100°C to 150°C
+â0.5
*qVC FOR VCE(sat)
0
TJ = -â55°C to +100°C
-â0.5
-â1.0
-â1.5
-â2.0
qVB FOR VBE
-â2.5
2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
Figure 13. Temperature Coefficients
www.onsemi.com
5
|
▷ |