2N4918G Datasheet, PDF (5/6 Pages) ON Semiconductor – Medium-Power Plastic PNP Silicon Transistors

2N4918 − 2N4920* Series
TYPICAL DC CHARACTERISTICS
1000
700
500
300
T_J = 150°C
200
25°C
100
70
−55 °C
50
30
20
V_CE = 1.0 V
1.0
I_C = 0.1 A 0.25 A 0.5 A
1.0 A
0.8
0.6
T_J = 25°C
0.4
0.2
10
2.0 3.0 5.0
10 20 30 50 100 200 300 500 1000 2000
I_C, COLLECTOR CURRENT (mA)
Figure 8. Current Gain
0
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200
I_B, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
10⁸
I_C = 10 I_CES
V_CE = 30 V
10⁷
10⁶
I_C ≈ I_CES
10⁵
I_C = 2x I_CES
I_CES VALUES
10⁴
OBTAINED FROM
FIGURE 13
10³
0
30
60
90
120
150
T_J, JUNCTION TEMPERATURE (°C)
Figure 10. Effects of Base−Emitter Resistance
1.5
1.2
T_J = 25°C
0.9
V_BE(sat) @ I_C/I_B = 10
0.6
V_BE @ V_CE = 2.0 V
0.3
V_CE(sat) @ I_C/I_B = 10
0
2.0 3.0 5.0 10 20 30 50
100 200 300 500 1000 2000
I_C, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltage
10²
10¹
T_J = 150°C
10⁰
10^−1
100°C
10^{− 2}
10⁴
10^{3 REVERSE}
−0.2 −0.1
I_C = I_CES
25°C
FORWARD
0
+0.1 +0.2
V_CE = 30 V
+0.3 +0.4 +0.5
V_BE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut−Off Region
+2.5
+2.0
+1.5
*APPLIES FOR I_C/I_B <
hFE @ VCE + 1.0 V
2
+1.0
T_J = 100°C to 150°C
+0.5
*q_VC FOR V_CE(sat)
0
T_J = −55°C to +100°C
−0.5
−1.0
−1.5
−2.0
q_VB FOR V_BE
−2.5
2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000
I_C, COLLECTOR CURRENT (mA)
Figure 13. Temperature Coefficients
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