2N4918 Datasheet, PDF (5/8 Pages) ON Semiconductor – GENERAL.PURPOSE POWER TRANSISTORS

2N4918 thru 2N4920
TYPICAL DC CHARACTERISTICS
1000
700
500
300
TJ = 150°C
200
25°C
100
70
-ā55°C
50
30
20
VCE = 1.0 V
1.0
IC = 0.1 A 0.25 A 0.5 A
1.0 A
0.8
0.6
TJ = 25°C
0.4
0.2
10
2.0 3.0 5.0
10 20 30 50 100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
Figure 8. Current Gain
0
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
108
IC = 10 ICES
VCE = 30 V
107
106
IC ≈ ICES
105
IC = 2x ICES
ICES VALUES
104
OBTAINED FROM
FIGURE 13
103
0
30
60
90
120
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Effects of Base–Emitter Resistance
1.5
1.2
TJ = 25°C
0.9
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2.0 V
0.3
VCE(sat) @ IC/IB = 10
0
2.0 3.0 5.0 10 20 30 50
100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltage
102
101
TJ = 150°C
100
10-1
100°C
10-ā2
104
103 ^REVERSE
-ā0.2 -ā0.1
IC = ICES
25°C
FORWARD
0
+ā0.1 +ā0.2
VCE = 30 V
+ā0.3 +ā0.4 +ā0.5
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut–Off Region
+ā2.5
+ā2.0
+ā1.5
*APPLIES FOR IC/IB <
hFEĂ@ĂVCEĂ +Ă 1.0ĂV
2
+ā1.0
TJ = 100°C to 150°C
+ā0.5
0
*θ_VC FOR VCE(sat)
TJ = -ā55°C to +100°C
-ā0.5
-ā1.0
-ā1.5
-ā2.0
θ_VB FOR VBE
-ā2.5
2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
Figure 13. Temperature Coefficients
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