LE25S161_16 Datasheet, PDF (48/54 Pages) ON Semiconductor – Serial Flash Memory

LE25S161
16-7. AC Characteristics
Parameter
Clock
frequency
Low-Power Read (RDLP: 03h)
Dual Output Read (RDDO: 3Bh)
Dual I/O Read (RDIO: BBh)
Other instructions
Input signal rising/falling time
SCK logic high level pulse
width
33.33MHz
50MHz
70MHz
Symbol
fCLK
tRF
tCLHI
min
0.1
11
8
6
Ratings
typ
unit
max
33.33
50 MHz
70
V/ns
ns
33.33MHz
SCK logic low level pulse
width
50MHz
70MHz
CS active setup time
CS not active hold time
Data setup time
Data hold time
CS wait pulse width
CS active hold time
CS not active setup time
Output high impedance time from CS
33.33MHz
Output data time from SCK
50MHz
70MHz
Output data hold time
Output low impedance time from SCK
HOLD setup time
HOLD hold time
Output low impedance time from HOLD
Output high impedance time from HOLD
WP setup time
WP hold time
Write status register time
Normal Page Programming
cycle time
256Byte
nByte
Low-Power Page Programming
cycle time
256Byte
nByte
Small Sector Erase cycle time
Sector Erase cycle time
Chip Erase cycle time
Recovery time from suspend
Deep Power-down time
Deep Power-down recovery time
Internal reset time
tCLLO
tSLCH
tCHSL
tDS
tDH
tCPH
tCHSH
tSHCH
tCHZ
tV
tHO
tCLZ
tHS
tHH
tHLZ
tHHZ
tWPS
tWPH
tWRSR
tPP
tPPL
tSSE
tSE
tCHE
tRSUS
tDP
tRDP
tRST
11
8
ns
6
6
ns
6
ns
3
ns
3
ns
20
ns
6
ns
6
ns
8 ns
10
8 ns
8
1
ns
0
ns
6
ns
6
ns
8 ns
8 ns
20
ns
20
ns
5
8 ms
0.40
0.14 +
n * 0.26/256
0.60
0.14 +
n * 0.46/256
10
0.70
ms
0.35 + n * 0.35/256
1.20
ms
0.50 + n * 0.70/256
120 ms
15
150 ms
210
2400 ms
40 µs
5 µs
40 µs
40 µs
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
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