MT9M034_16 Datasheet, PDF (46/53 Pages) ON Semiconductor – 1/3-Inch CMOS Digital Image Sensor

MT9M034: 1/3-Inch CMOS Digital Image Sensor
Electrical Specifications
DC Electrical Characteristics
The DC electrical characteristics are shown in the tables below.
Table 19: DC Electrical Characteristics
Symbol Definition
VDD
Core digital voltage
VDD_IO I/O digital voltage
VAA
VAA_PIX
VDD_PLL
VIH
VIL
Analog voltage
Pixel supply voltage
PLL supply voltage
Input HIGH voltage
Input LOW voltage
IIN
Input leakage current
VOH
Output HIGH voltage
VOL
Output LOW voltage
IOH
Output HIGH current
IOL
Output LOW current
Condition
No pull-up resistor; VIN = VDD_IO or
DGND
At specified VOH
At specified VOL
Min
Typ
1.7
1.8
1.7/2.5 1.8/
2.8
2.5
2.8
2.5
2.8
2.5
2.8
VDD_IO*0.7 –
–
–
–
–
Max
Unit
1.95
V
1.9/3.1
V
3.1
V
3.1
V
3.1
V
–
V
VDD_IO*0.3 V
20
A
VDD_IO-0.3 –
–
–
-22
–
–
–
–
V
0.4
V
–
mA
22
mA
Caution Stresses greater than those listed in Table 14 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other con-
ditions above those indicated in the operational sections of this specification is not implied.
Table 20:
Symbol
VSUPPLY
ISUPPLY
IGND
VIN
VOUT
TSTG1
Absolute Maximum Ratings
Parameter
Power supply voltage (all supplies)
Total power supply current
Total ground current
DC input voltage
DC output voltage
Storage temperature
Minimum
–0.3
–
–
–0.3
–0.3
–40
Maximum
4.5
200
200
VDD_IO + 0.3
VDD_IO + 0.3
+150
Unit
V
mA
mA
V
V
°C
Symbol
VSUPPLY
ISUPPLY
IGND
VIN
VOUT
TSTG1
Notes: 1. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. To keep dark current and shot noise artifacts from impacting image quality, keep operating tem-
perature at a minimum.
MT9M034/D Rev. 8, 2/16 EN
46
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