TIP3055G Datasheet, PDF (4/6 Pages) ON Semiconductor – Complementary Silicon Power Transistors

TIP3055 (NPN), TIP2955 (PNP)
1000
V_CE = 4.0 V
T_J = 25°C
100
TIP3055
TIP2955
10
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
I_C, COLLECTOR CURRENT (AMP)
Figure 1. DC Current Gain
100
50
30
20
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
1.0
300 ms
1.0 ms
dc
10 ms
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT @ T_C = 25°C
T_J = 150°C
2.0 4.0 6.0 10
20
40 60
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T_C = 25°C; T_J(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated for temperature.
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