PACUSBVB-D1 Datasheet, PDF (4/9 Pages) California Micro Devices Corp – USB Downstream Port Terminator with VBUS ESD Protection

PACUSBVBD1/D2/D3
ELECTRICAL OPERATING CHARACTERISTICS
SYMBOL PARAMETER
R1
Resistance of R1 Resistor
(PACUSBVB-D2Y6/Y6R)
R1
Resistance of R1 Resistor
(PACUSBVB-D3Y6/Y6R)
R1
Resistance of R1 Resistor
(PACUSBVB-D1Y6/Y6R)
R2
Resistance of R2 Resistor
TCR
Temperature Coefficient of
Resistance
C1
Capacitance of C1 Capacitor
TOL
CM
I
LEAK
V
RB
V
SIG
Matching Tolerance of C1
Capacitors
Diode Leakage Current to GND
Diode Reverse Bias Voltage
Signal Voltage:
Positive Clamp
Negative Clamp
V_ESD
In-system ESD Withstand Voltage
MIL-STD-883D, Method 3015
(HBM)
IEC 61000-4-2 Contact
Discharge
V_CL
Clamping voltage under ESD
discharge
CONDITIONS
T_A = 25°C
MIN TYP MAX UNITS
12
15
18
Ω
T = 25°C
A
17.6
22
26.4
Ω
T = 25°C
A
26.4
33
39.6
Ω
T_A = 25°C
0 VDC; 30 mVAC; 1MHz; 25°C
2.5 VDC; 30 mVAC; 1MHz; 25°C
1MHz; 25°C
Measured at 3.3 VDC, 25°C
I = 10μA; T = 25°C
LOAD
A
15
kΩ
+1300
ppm/°
C
37.6 47 56.4 pF
25.6 32 38.4 pF
+2
%
1
100 nA
5.5
V
I = 10mA; T = 25°C
LOAD
A
I_LOAD = 10mA; T_A = 25°C
5.6
6.8
9.0
V
-0.4 -0.8 -1.5
V
Pins 1, 3; Notes 1 and 2
±4
kV
Pins 4, 5; Note 1
±20
kV
Pins 4, 5; Note 1
±15
kV
MIL-STD-883D, Method 3015
+8kV; Note 3
12
V
MIL-STD-883D, Method 3015 -8kV;
-7
V
Note 3
Note 1: ESD voltage applied to pins with respect to GND, one at a time; unused pins are left open.
Note 2: Pins 1 and 3 are not connected to the USB port connector, and therefore are not exposed to external ESD hazards.
Thus, they do not require the high ESD protection levels provided for pins 4, 5, and 6.
Note 3: ESD Clamping Voltage is measured at the opposite end of R1 from the pin to which the ESD discharge is applied (e.g., if
ESD is applied to pin 6, then the clamping voltage is measured at pin 1).
Rev. 2 | Page 4 of 9 | www.onsemi.com