NVTR4502PT1G Datasheet, PDF (4/5 Pages) ON Semiconductor – −30 V, −1.95 A, Single, P−Channel, SOT−23

NTR4502P, NVTR4502P
500
V_DS = 0 V
400
C_ISS
300
C_RSS
V_GS = 0 V
T_J = 25°C
200
C_ISS
C_OSS
100
C_RSS
0
10 5
0 5 10 15 20 25 30
−V_GS −V_DS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (V)
Figure 7. Capacitance Variation
12
18
Q_T
10
15
8
12
6
9
Q_GS
Q_GD
4
6
2
I_D = −1.95 A ³
T_J = 25°C
0
0
0
1
2
3
4
5
6
7
Q_G, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
100
V_DS = −15 V
I_D = −1.95 V
V_GS = −10 V
t_d(off)
3
T_J = 25°C
2.5
t_f
2
10
t_r
1.5
t_d(on)
1
0.5
1
1
10
100
R_G, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
0
0.3
0.6
0.9
1.2
−V_SD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus
Current
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