NVMFS5C628NL_17 Datasheet, PDF (4/6 Pages) ON Semiconductor – Power MOSFET

NVMFS5C628NL
TYPICAL CHARACTERISTICS
10000
1000
C_ISS
C_OSS
100
10
1 V_GS = 0 V
T_J = 25°C
C_RSS
f = 1 MHz
0.1
0
10
20
30
40
50
60
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
10
Q_T
9
8
7
6
5
4
Q_GS
Q_GD
3
2
V_DS = 48 V
T_J = 25°C
1
I_D = 50 A
0
0
10
20
30
40
50
Q_G, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source vs. Total Charge
1000
100
t_d(off)
t_f
t_r
100
V_GS = 0 V
10
t_d(on)
10
V_GS = 10 V
V_DS = 48 V
I_D = 50 A
1
1
10
100
R_G, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
1 ms ^{500 ms}
10 ms
10
T_C = 25°C
1 ^{VGS ≤ 10 V}
Single Pulse
0.1
R_DS(on) Limit
Thermal Limit
Package Limit
0.01
0.1
1
10
100
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
1
T_J = 125°C
T_J = 25°C T_J = −55°C
0.1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V_SD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
100
T_J (initial)= 25°C
10
T_J (initial)= 100°C
1
1.E−05
1.E−04
1.E−03
1.E−02
T_AV, TIME IN AVALANCHE (s)
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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