NTMFS4925N_12 Datasheet, PDF (4/7 Pages) ON Semiconductor – Power MOSFET

NTMFS4925N
TYPICAL CHARACTERISTICS
120 _{10 V}
110
100
90
80
70
60
50
40
30
20
10
0
0
4.5 V
T_J = 25°C
1
2
3
4.0 V
3.5 V
3.0 V
V_GS = 2.5 V
4
5
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
120
110
100
90
80
70
60
50
40
30
20
10
0
1
V_DS = 10 V
T_J = −55°C
T_J = 25°C
T_J = 125°C
2
3
4
5
V_GS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0
3
I_D = 30 A
4
5
6
7
8
9
V_GS (V)
Figure 3. On−Resistance vs. V_GS
0.011
0.010 T = 25°C
0.009
0.008
0.007
V_GS = 4.5 V
0.006
0.005
V_GS = 10 V
0.004
0.003
10
10 20 30 40 50 60 70 80 90 100 110 120
I_D, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
1.6
I_D = 30 A
1.5
V_GS = 10 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
−50 −25 0 25 50 75 100 125
T_J, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
10,000
1,000
T_J = 150°C
T_J = 125°C
100
T_J = 85°C
10
150
5
10
15
V_GS = 0 V
20
25
30
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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