NTLUS3A90PZTAG Datasheet, PDF (4/6 Pages) ON Semiconductor – −20 V, −5.0 A, Cool Single P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package

NTLUS3A90PZ
TYPICAL CHARACTERISTICS
2000
1600
1200
C_iss
800
V_GS = 0 V
T_J = 25°C
f = 1 MHz
400
C_oss
0 ^Crss
0 2 4 6 8 10 12 14 16 18 20
−V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
V_GS = −4.5 V
V_DD = −15 V
I_D = −3.0 A
100
10
t_d(off)
t_f
t_r
t_d(on)
5
Q_T
4
V_DS
3
12
10
V_GS
8
6
Q_GS
Q_GD
2
4
1
V_DS = −10 V
I_D = −3.0 A ²
T_J = 25°C
0
0
0
2
4
6
8
10
12
14
Q_G, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
T_J = 125°C
10
T_J = 25°C
1
1
10
100
R_G, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
0.85
I_D = −250 mA
0.75
0.65
0.55
0.45
0.35
0.25
0.15
−50 −25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 11. Threshold Voltage
1
0.2
0.4
T_J = −55°C
0.6
0.8
1.0
1.2
−V_SD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
225
200
175
150
125
100
75
50
25
0
1.E−05
1.E−03
1.E−01
1.E+01 1.E+03
SINGLE PULSE TIME (s)
Figure 12. Single Pulse Maximum Power
Dissipation
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