NTB6412AN_12 Datasheet, PDF (4/7 Pages) ON Semiconductor – N-Channel Power MOSFET

NTB6412AN, NTP6412AN, NVB6412AN
5000
4000
3000
2000
10
T_J = 25°C
V_GS = 0 V
8
V_DS
Q_T
100
V_GS
80
6 ^Qgs
Q_gd
60
C_iss
4
40
1000
0 ^Crss
C_oss
0 10 20 30 40 50 60 70 80 90
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
2
0
100 0
V_DS = 80 V 20
I_D = 58 A
T_J = 25°C
0
10 20 30 40 50 60 70
Q_g, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
1000
V_DS = 80 V
I_D = 58 A
V_GS = 10 V
100
t_f
t_r
t_d(off)
60
T_J = 25°C
50 ^{VGS = 0 V}
40
30
10
t_d(on)
20
10
1
1
10
100
R_G, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
0
0.5
0.6
0.7
0.8
0.9
1.0
V_SD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus
Current
1000
300
I_D = 44.7 A
100
10 ms
100 ms
10
1 ms
10 ms
1
0.1
1
R_DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
dc
V_GS = 10 V
SINGLE PULSE
T_C = 25°C
100
1000
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
200
100
0
25
50
75
100
125
150 175
T_J, STARTING JUNCTION TEMPERATURE
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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