NSR15304NXT5G Datasheet, PDF (4/5 Pages) ON Semiconductor – 1.5 A, 30 V, Schottky Barrier Diode

NSR15304NXT5G
TYPICAL CHARACTERISTICS
5000
500
50
5
0
125°C
150°C
90°C
25°C −40°C −55°C
0.1
0.2
0.3
0.4
0.5
V_F, FORWARD VOLTAGE (V)
Figure 5. Forward Voltage
100K
10K
1K
100
10
1
0.1
0.01
0.001
0.0001
0.00001
0.6
0
150°C
125°C
90°C
25°C
−40°C
−55°C
5
10
15
20
25
30
V_R, REVERSE VOLTAGE (V)
Figure 6. Leakage Current
1000
100
10
1
0.8
1.0
0.5
0.2
0.1
1000
100
10
1
0.8
1.0
0.5
0.2
0.1
0.1
100 300 500 700 900 1100 1300 1500
I_F, FORWARD CURRENT (mA)
Figure 7. Average Forward Power Dissipation
0.1
0
5
10
15
20
25
30
V_R, REVERSE VOLTAGE (V)
Figure 8. Average Reverse Power Dissipation
160
140
120
100
80
60
40
20
0
0
f = 1.0 MHz
5
10
15
20
25
30
V_R, REVERSE VOLTAGE (V)
Figure 9. Total Capacitance
30
25
20
15
10
5 _{Based on square wave currents}
T_J = 25°C prior to surge
0
0.001 0.01 0.1
1
10
100
T_p, PULSE ON TIME (ms)
Figure 10. Forward Surge Maximum
1000
www.onsemi.com
4