NSR05T30P2 Datasheet, PDF (4/5 Pages) ON Semiconductor – 500 mA, 30V Schottky Barrier Diode

NSR05T30P2
TYPICAL CHARACTERISTICS
1000
150°C
100
125°C
100°C
10
85°C
1
0.1
0
25°C
−25°C
−55°C
0.1
0.2
0.3
0.4
V_F, FORWARD VOLTAGE (V)
Figure 5. Forward Voltage
100
10
1
0.1
0.01
0.001
0.0001
0.00001
0.5
0
150°C
125°C
100°C
85°C
25°C
−25°C
−55°C
5
10
15
20
25
30
V_R, REVERSE VOLTAGE (V)
Figure 6. Leakage Current
1000
100
10
1
1.0
0.1
0.2 0.5 0.8
0.1
0.01
0.001
0 50 100 150 200 250 300 350 400 450 500
I_F, FORWARD CURRENT (mA)
Figure 7. Average Forward Power Dissipation
1000
1.0
100
10
0.2 0.5 0.8
0.1
1
0.1
0
5
10
15
20
25
30
V_R, REVERSE VOLTAGE (V)
Figure 8. Average Reverse Power Dissipation
50
45
f = 1.0 MHz
40
35
30
25
20
15
10
5
0
0
5
10
15
20
25
30
V_R, REVERSE VOLTAGE (V)
Figure 9. Total Capacitance
9
Based on square wave currents
8
T_J = 25°C prior to surge
7
6
5
4
3
2
1
0
0.001 0.01
0.1
1
10
100
t_P, PULSE ON TIME (ms)
Figure 10. Forward Surge Current
1000
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4