NRVTSS3100E Datasheet, PDF (4/5 Pages) ON Semiconductor – Low Leakage Trench-based Schottky Rectifier

NRVTSS3100E
TYPICAL CHARACTERISTICS
6
I_PK/I_AV
= 20
5
4
3
2
I_PK/I_AV = 10
Square Wave
I_PK/I_AV = 5
DC
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
I_F(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
1000
100 50% Duty Cycle
20%
10%
10 5%
2%
1 _1%
0.1
0.01
0.001
0.000001 0.00001 0.0001
0.001
0.01
0.1
1
10
100
t, PULSE TIME (S)
Figure 8. Typical Transient Thermal Response, Junction−to−Ambient
1000
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4