NRVTSM260E Datasheet, PDF (4/5 Pages) ON Semiconductor – Surface Mount Trench Schottky Power Rectifier

NRVTSM260E
TYPICAL CHARACTERISTICS
6
I_PK/I_AV = 20
I_PK/I_AV = 10
T_J = 175°C
4
I_PK/I_AV = 5
2
SQUARE WAVE
dc
0
0
0.5
1.0
1.5
2.0
2.5
3.0
I_F(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
1000
50% (DUTY CYCLE)
100 _20%
10%
5.0%
10 _2.0%
1.0%
1
SINGLE PULSE
0.1
0.000001 0.00001 0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (s)
Figure 8. Thermal Response, Junction−to−Ambient (20 mm² pad)
100
50% (DUTY CYCLE)
20%
10 ^10%
5.0%
2.0%
1.0%
1
SINGLE PULSE
0.1
0.000001 0.00001 0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (s)
Figure 9. Thermal Response, Junction−to−Ambient (1 in² pad)
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4
100
1000
100
1000