NRVTSA4100E Datasheet, PDF (4/5 Pages) ON Semiconductor – Low Leakage Trench-based Schottky Rectifier

NRVTSA4100E
TYPICAL CHARACTERISTICS
8
I_PK/I_AV
7 ^{= 20}
6
I_PK/I_AV = 10
I_PK/I_AV = 5
5
4
Square Wave
3
DC
2
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
I_F(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
1000
100 ^{50% Duty Cycle}
20%
10%
10 ^5%
2%
1 1%
0.1
Single Pulse
0.01
0.001
0.000001 0.00001 0.0001
0.001
0.01
0.1
1
10
100
t, PULSE TIME (S)
Figure 8. Typical Transient Thermal Response, Junction−to−Ambient
1000
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4