NCP1599 Datasheet, PDF (4/10 Pages) ON Semiconductor – 1 MHz, 3 A Synchronous Buck Regulator

NCP1599
ELECTRICAL CHARACTERISTICS (V_in = 2.8 V − 5.5 V, V_out = 1.2 V, T_J = +25°C for typical value; −40°C < T_J < +125°C for
min/max values unless noted otherwise)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
V_in Input Voltage Range
V_CC UVLO Threshold
UVLO Hysteresis
V_CC Quiescent Current
V_CCP Quiescent Current
FEEDBACK VOLTAGE
V_in
2.8
5.5
V
2.4 2.55 2.65
V
200
mV
I_inVCC
I_inVCCP
V_in = 5.0 V, V_FB = 1.5 V, (No Switching)
V_in = 5.0 V,V_FB = 1.5 V, (No Switching)
1.1
2.0
mA
1.4
3.0
mA
Reference Voltage
Feedback Input Bias Current
Feedback Voltage Line Regulation
GM AMPLIFIER
V_ref
V_FB = V_COMP
0.788 0.800 0.812 V
I_FB
V_FB = 0.8 V
10
100
nA
V_FB = V_COMP, V_in = 2.7 V to 6.0 V
0.03 %/V
Gm Amp Open Loop Voltage Gain
(Note 2)
AV_gm
55
dB
Gm Amp Transconductance (Note 2)
PWM
Maximum Duty Cycle (Regulating)
Minimum Controllable ON Time (Note 2)
CURRENT SENSE AMPLIFIER
gm_COMP
V_FB > 0.75 V, DICOMP=$10 mA
1000
mA/V
83
%
50
ns
Current Sense to COMP
Transconductance (Note 2)
gm_POWER
5.0
A/V
PULSE−BY−PULSE CURRENT LIMIT
Pulse−by−Pulse Current Limit (Note 3)
OSCILLATOR
Oscillator Frequency
MOSFET
High Side MOSFET ON Resistance
High Side MOSFET Leakage (Note 2)
Low Side MOSFET ON Resistance
I_LIM
F_SW
R_DS(on)
HS
R_DS(on)
LS
V_in = 4.0 V − 5.5 V
I_DS = 100 mA, V_GS = 5 V
V_SW = 0 V
I_DS = 100 mA, V_GS = 5 V
3.5
4.0
4.5
A
0.87 1.0 1.13 MHz
140 200 mW
10
mA
90
125 mW
Low Side MOSFET Leakage (Note 2)
V_SW = 5 V
10
mA
SOFT−START
Soft−Start Ramp Time (Note 2)
t_SS
Hiccup Timer (Note 2)
THERMAL SHUTDOWN
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
2. Guaranteed by design.
3. Current limit operation not guaranteed below V_in = 4.0 V.
F_SW = 1 MHz
1.0
ms
2.0
ms
170
°C
40
°C
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