NCP1255_13 Datasheet, PDF (4/28 Pages) ON Semiconductor – Current-Mode PWM Controller for Off-line Power Supplies featuring Peak Power Excursion

NCP1255
Table 3. MAXIMUM RATINGS TABLE
Symbol
Rating
Value
Unit
V_cc
Power Supply voltage, V_cc pin, continuous voltage
Maximum voltage on low power pins CS, FB, Timer, OPP and BO
−0.3 to 35
V
−0.3 to 10
V
V_DRV
IOPP
Maximum voltage on drive pin
Maximum injected current into the OPP pin
−0.3 to V_cc+0.3
V
−2
mA
I_SCR
R_θJ−A
T_J,max
T_STG
HBM
Maximum continuous current into the V_cc pin while in latched mode
Thermal Resistance Junction−to−Air
Maximum Junction Temperature
Storage Temperature Range
Human Body Model ESD Capability (All pins except HV) per JEDEC JESD22−A114F
3
178
150
−60 to +150
2
mA
°C/W
°C
°C
kV
MM
Machine Model ESD Capability (All pins except DRV) per JEDEC JESD22−A115C
200
V
CDM Charged−Device Model ESD Capability per JEDEC JESD22−C101E
500
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device contains latch−up protection and exceeds 100 mA per JEDEC Standard JESD78.
Table 4. ELECTRICAL CHARACTERISTICS
(For typical values T_J = 25°C, for min/max values T_J = −40°C to +125°C, Max T_J = 150°C, V_cc = 12 V unless otherwise noted)
Symbol
Rating
Pin Min
Typ
Max Unit
SUPPLY SECTION
VCC_ON
VCC_(min)
VCC_HYST
V_ZENER
ICC1
V_CC increasing level at which driving pulses are authorized
V_CC decreasing level at which driving pulses are stopped
Hysteresis Vcc_ON−Vcc_(min)
Clamped V_cc when latched off @ ICC = 500 mA
Start−up current
6
15.8
18
20
V
6
8
8.8
9.4
V
6
6
−
−
V
6
−
7
−
V
6
−
−
15
mA
ICC2
Internal IC consumption with V_FB = 3.2 V, F_SW = 65 kHz and C_L = 0
6
−
1.4
2.2
mA
ICC3
Internal IC consumption with V_FB = 3.2 V, F_SW = 65 kHz and C_L = 1 nF
6
−
2.1
3.0
mA
ICC4
Internal IC consumption with V_FB = 4.5 V, F_SW = 130 kHz and C_L = 0
6
−
1.7
2.5
mA
ICC5
Internal IC consumption with V_FB = 4.5 V, F_SW = 130 kHz and C_L = 1 nF
6
−
3.1
4.0
mA
ICCstby
Internal IC consumption while in skip mode
(V_cc = 12 V, driving a typical 6−A/600−V MOSFET)
6
750
mA
ICC_LATCH Current flowing into V_CC pin that keeps the controller latched:
6
mA
T_j = −40°C to 125°C
40
R_lim
SCR current−limit series resistor
DRIVE OUTPUT
6
4
kW
T_r
Output voltage rise−time @ CL = 1 nF, 10−90% of output signal
5
−
40
−
ns
T_f
Output voltage fall−time @ CL = 1 nF, 10−90% of output signal
5
−
30
−
ns
R_OH
Source resistance
5
−
13
−
W
R_OL
Sink resistance
5
−
6
−
W
I_source Peak source current, V_GS = 0 V – (Note 2)
5
300
mA
I_sink
Peak sink current, V_GS = 12 V – (Note 2)
5
500
mA
V_DRVlow DRV pin level at V_CC close to VCC_(min) with a 33−kW resistor to GND
5
8
−
−
V
V_DRVhigh DRV pin level at V_CC= V_OVP−0.2 V – DRV unloaded
5
10
12
14
V
2. Guaranteed by design
3. See characterization table for linearity over negative bias voltage – we recommend keeping the level on pin 3 below −300 mV.
4. A 1−MW resistor is connected from pin 3 to the ground for the measurement.
http://onsemi.com
4