MUN5331DW1 Datasheet, PDF (4/7 Pages) ON Semiconductor – Complementary Bias Resistor Transistors

MUN5331DW1, NSBC123EPDXV6
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
MUN5331DW1, NSBC123EPDXV6
1
I_C/I_B = 10
0.1
25°C
150°C
−55°C
1000
V_CE = 10 V
100
10
1
25°C
150°C
−55°C
0.01
0
4
3
2
1
0
0
0.1
10
20
30
40
50
0.1
1
10
100
I_C, COLLECTOR CURRENT (mA)
I_C, COLLECTOR CURRENT (mA)
Figure 2. V_CE(sat) vs. I_C
Figure 3. DC Current Gain
f = 10 kHz
I_E = 0 A
T_A = 25°C
100
150°C
25°C
−55°C
10
10
20
30
40
V_R, REVERSE VOLTAGE (V)
Figure 4. Output Capacitance
100
1
V_O = 5 V
0.1
50
0
1
2
3
4
V_in, INPUT VOLTAGE (V)
Figure 5. Output Current vs. Input Voltage
10
−55°C
25°C
1
150°C
V_O = 0.2 V
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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