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MUN5214DW1 Datasheet, PDF (4/8 Pages) ON Semiconductor – Dual NPN Bias Resistor Transistors
MUN5214DW1, NSBC114YDXV6, NSBC114YDP6
TYPICAL CHARACTERISTICS
MUN5214DW1, NSBC114YDXV6
1
IC/IB = 10
1000
VCE = 10 V
25°C
150°C
0.1
0.01
0
150°C
25°C
−55°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC
100
10
1
50
0.1
−55°C
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
3.6
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
0
100
f = 10 kHz
IE = 0 A
TA = 25°C
10
1
0.1
−55°C
25°C
150°C
10
20
30
40
VR, REVERSE VOLTAGE (V)
Figure 4. Output Capacitance
0.01
VO = 5 V
0.001
50
0 1 2 3 4 5 6 7 8 9 10
Vin, INPUT VOLTAGE (V)
Figure 5. Output Current vs. Input Voltage
100
10
25°C
−55°C
1
150°C
0.1
0
VO = 0.2 V
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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