MUN2233_15 Datasheet, PDF (4/12 Pages) ON Semiconductor – Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k

MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3, NSBC143ZF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
Thermal Characteristics (SOT−1123) (NSBC143ZF3)
Total Device Dissipation
T_A = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance, Junction to Lead
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR*4 @ 100 mm², 1 oz. copper traces, still air.
4. FR*4 @ 500 mm², 1 oz. copper traces, still air.
Symbol
Max
Unit
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 3)
P_D
R_qJA
R_qJL
T_J, T_stg
254
297
2.0
2.4
493
421
193
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
Table 3. ELECTRICAL CHARACTERISTICS (T_A = 25°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(V_CB = 50 V, I_E = 0)
Collector−Emitter Cutoff Current
(V_CE = 50 V, I_B = 0)
I_CBO
nAdc
−
−
100
I_CEO
nAdc
−
−
500
Emitter−Base Cutoff Current
(V_EB = 6.0 V, I_C = 0)
I_EBO
mAdc
−
−
0.18
Collector−Base Breakdown Voltage
(I_C = 10 mA, I_E = 0)
V_(BR)CBO
50
−
Vdc
−
Collector−Emitter Breakdown Voltage (Note 5)
(I_C = 2.0 mA, I_B = 0)
V_(BR)CEO
50
−
Vdc
−
ON CHARACTERISTICS
DC Current Gain (Note 5)
(I_C = 5.0 mA, V_CE = 10 V)
h_FE
80
200
−
Collector *Emitter Saturation Voltage (Note 5)
(I_C = 10 mA, I_B = 1.0 mA)
VCE(sat)
−
Vdc
−
0.25
Input Voltage (off)
(V_CE = 5.0 V, I_C = 100 mA)
Input Voltage (on)
(V_CE = 0.3 V, I_C = 5 mA)
Output Voltage (on)
(V_CC = 5.0 V, V_B = 2.5 V, R_L = 1.0 kW)
V_i(off)
V_i(on)
V_OL
Vdc
−
0.6
0.5
Vdc
1.3
0.9
−
Vdc
−
−
0.2
Output Voltage (off)
(V_CC = 5.0 V, V_B = 0.5 V, R_L = 1.0 kW)
V_OH
4.9
−
Vdc
−
Input Resistor
R1
3.3
4.7
6.1
kW
Resistor Ratio
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%.
R₁/R₂
0.08
0.1
0.12
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