MUN2131 Datasheet, PDF (4/11 Pages) ON Semiconductor – Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k

MUN2131, MMUN2131L, MUN5131, DTA123EE, DTA123EM3, NSBA123EF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SOT−1123) (NSBA123EF3)
Total Device Dissipation
T_A = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance, Junction to Lead
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm², 1 oz. copper traces, still air.
4. FR−4 @ 500 mm², 1 oz. copper traces, still air.
Symbol
Max
Unit
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 3)
P_D
R_qJA
R_qJL
T_J, T_stg
254
297
2.0
2.4
493
421
193
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
Table 3. ELECTRICAL CHARACTERISTICS (T_A = 25°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(V_CB = 50 V, I_E = 0)
I_CBO
−
−
100
Collector−Emitter Cutoff Current
(V_CE = 50 V, I_B = 0)
I_CEO
−
−
500
Emitter−Base Cutoff Current
(V_EB = 6.0 V, I_C = 0)
I_EBO
−
−
2.3
Collector−Base Breakdown Voltage
(I_C = 10 mA, I_E = 0)
Collector−Emitter Breakdown Voltage (Note 5)
(I_C = 2.0 mA, I_B = 0)
V_(BR)CBO
50
−
−
V_(BR)CEO
50
−
−
ON CHARACTERISTICS
DC Current Gain (Note 5)
(I_C = 5.0 mA, V_CE = 10 V)
h_FE
8.0
15
−
Collector−Emitter Saturation Voltage (Note 5)
(I_C = 10 mA, I_B = 5.0 mA)
V_CE(sat)
−
−
0.25
Input Voltage (off)
(V_CE = 5.0 V, I_C = 100 mA)
Input Voltage (on)
(V_CE = 0.3 V, I_C = 20 mA)
V_i(off)
V_i(on)
−
1.2
0.5
2.0
1.7
−
Output Voltage (on)
(V_CC = 5.0 V, V_B = 2.5 V, R_L = 1.0 kW)
V_OL
−
−
0.2
Output Voltage (off)
(V_CC = 5.0 V, V_B = 0.25 V, R_L = 1.0 kW)
V_OH
4.9
−
−
Input Resistor
R1
1.5
2.2
2.9
Resistor Ratio
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
R₁/R₂
0.8
1.0
1.2
Unit
nAdc
nAdc
mAdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
kW
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