MTV6N100E Datasheet, PDF (4/11 Pages) Motorola, Inc – TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM

MTV6N100E
TYPICAL ELECTRICAL CHARACTERISTICS
12
T_J = 25°C
10
8
V_GS = 10 V
6V
5V
12
V_DS ≥ 10 V
10
8
100°C
6
6
25°C
4
4
2
4V
0
0 2 4 6 8 10 12 14 16 18 20
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
2
T_J = −55°C
0
2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.9
V_GS = 10 V
2.5
T_J = 100°C
2.1
1.7
25°C
1.3
0.9
− 55°C
0.5
0
2
4
6
8
10
12
I_D, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
1.56
T_J = 25°C
1.52
1.48
1.44
1.40
1.36
V_GS = 10 V
1.32
15 V
1.28
1.24
0 1 2 3 4 5 6 7 8 9 10 11 1
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.8
V_GS = 10 V
2.4
I_D = 3 A
2.0
1.6
1.2
0.8
0.4
−50 −25
0
25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100000
10000
V_GS = 0 V
1000
T_J = 125°C
100°C
100
25°C
10
1
0 100 200 300 400 500 600 700 800 900 10
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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