MTD3302 Datasheet, PDF (4/12 Pages) Motorola, Inc – SINGLE TMOS POWER MOSFET 30 VOLTS RDS(on) = 10 mohm

MTD3302
TYPICAL ELECTRICAL CHARACTERISTICS
60
V_GS = 10 V
50
40
30
20
10
4.5 V
6.0 V
4.3 V
4.1 V
3.9 V
3.7 V
3.5 V
3.3 V
3.1 V
T_J = 25°C
0
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
60
V_DS ≥ 10 V
50
40
30
T_J = 125°C
20
25°C
10
− 55°C
0
2 2.5 3 3.5 4 4.5 5 5.5 6
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.3
I_D = 5.0 A
T_J = 25°C
0.2
0.1
0
2
3
4
5
6
7
8
9 10
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−To−Source Voltage
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
T_J = 25°C
V_GS = 4.5 V
10 V
0.004
0.002
0
0
10
20
30
40
50
60
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.0
V_GS = 10 V
I_D = 10 A
1.5
1.0
0.5
1000
V_GS = 0 V
100
10
1
T_J = 125°C
100°C
25°C
0
−50 −25
0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
0.1
5
10
15
20
25
30
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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