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MMUN2114L Datasheet, PDF (4/12 Pages) ON Semiconductor – PNP Transistors with Monolithic Bias Resistor Network
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MUN2114, MMUN2114L, MUN5114, DTA114YE, DTA114YM3, NSBA114YF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SOT−1123) (NSBA114YF3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance, Junction to Lead
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
Symbol
Max
Unit
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 3)
PD
RqJA
RqJL
TJ, Tstg
254
297
2.0
2.4
493
421
193
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
Collector−Emitter Breakdown Voltage (Note 5)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
ON CHARACTERISTICS
DC Current Gain (Note 5)
hFE
(IC = 5.0 mA, VCE = 10 V)
Collector *Emitter Saturation Voltage (Note 5)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
Input Voltage (on)
(VCE = 0.2 V, IC = 1.0 mA)
Vi(on)
Output Voltage (on)
VOL
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
Output Voltage (off)
VOH
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
Input Resistor
R1
Resistor Ratio
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%.
R1/R2
Min
Typ
Max Unit
nAdc
−
−
100
nAdc
−
−
500
mAdc
−
−
0.2
50
−
Vdc
−
50
−
Vdc
−
80
140
−
Vdc
−
−
0.25
Vdc
−
0.7
−
Vdc
−
0.9
−
Vdc
−
−
0.2
4.9
−
Vdc
−
7.0
10
13
kW
0.17 0.21 0.25
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