MMDJ3N03BJT Datasheet, PDF (4/6 Pages) Motorola, Inc – DUAL BIPOLAR POWER TRANSISTOR NPN SILICON 30 VOLTS 3 AMPERES

1.2
0.8
0.4
0
0.1
MMDJ3N03BJT
1000
−55 °C
100
25°C
150°C
10
V_CE = 4.0 V
1.0
I_C, COLLECTOR CURRENT (A)
Figure 7. V_BE(on) Voltage
0
10
0.1
C_ob
1.0
10
100
V_R, REVERSE VOLTAGE (V)
Figure 8. Capacitance
100
10
0.5 ms
1.0
5.0 ms
100 ms
0.1
V_CE = 10 V
f_test = 1.0 MHz
T_A = 25°C
10
0.1
1.0
10
I_C, COLLECTOR CURRENT (A)
Figure 9. Current−Gain Bandwidth Product
2.0
1.5
1.0
0.5
0
25
T_A
50
75
100
125
15
T, TEMPERATURE (°C)
Figure 11. Power Derating
0.01
0.001
0.1
BONDING WIRE LIMIT
THERMAL LIMIT (SINGLE PULSE)
SECONDARY BREAKDOWN LIMIT
1.0
10
100
V_CE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 10. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and secondary
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 10 is based on T_J(pk) = 150_C; T_C is
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided T_J(pk)
v 150_C. T_J(pk) may be calculated from the data in
Figure 12. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by secondary breakdown.
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