MMBT4403WT1G Datasheet, PDF (4/6 Pages) ON Semiconductor – Switching Transistor

MMBT4403WT1G
SMALL--SIGNAL CHARACTERISTICS NOISE FIGURE
V_CE = --10 Vdc, T_A = 25C; Bandwidth = 1.0 Hz
10
10
f = 1 kHz
8
8
6
I_C = 1.0 mA, R_S = 430 Ω
I_C = 500 mA, R_S = 560 Ω
I_C = 50 mA, R_S = 2.7 kΩ
4
I_C = 100 mA, R_S = 1.6 kΩ
6
I_C = 50 mA
100 mA
4
500 mA
1.0 mA
2
R_S = OPTIMUM SOURCE RESISTANCE
2
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (kHz)
Figure 8. Frequency Effects
50 100
0
50 100 200
500 1 k 2 k
5 k 10 k 20 k 50 k
R_S, SOURCE RESISTANCE (OHMS)
Figure 9. Source Resistance Effects
h PARAMETERS
V_CE = 10 Vdc, f = 1.0 kHz, T_A = 25C
This group of graphs illustrates the relationship between h_fe and other “h” parameters for this series of transistors. To obtain
these curves, a high- gain and a low- gain unit were selected from the MMBT4403LT1 lines, and the same units were used
to develop the correspondingly numbered curves on each graph.
1000
700
500
300
200
100
70
50
30
0.1
20
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
0.2 0.3 0.5 0.7 1.0
2.0 3.0
I_C, COLLECTOR CURRENT (mAdc)
Figure 10. Current Gain
5.0 7.0 10
100 k
50 k
20 k
10 k
5k
2k
1k
500
200
100
0.1
500
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
I_C, COLLECTOR CURRENT (mAdc)
Figure 11. Input Impedance
10
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
5.0
100
50
2.0
20
1.0
MMBT4403LT1 UNIT 1
10
MMBT4403LT1 UNIT 2
0.5
5.0
0.2
0.1
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
I_C, COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
2.0
1.0
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
I_C, COLLECTOR CURRENT (mAdc)
Figure 13. Output Admittance
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