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MMBT3416LT3G Datasheet, PDF (4/7 Pages) ON Semiconductor – General Purpose Amplifier
MMBT3416LT3G
TYPICAL STATIC CHARACTERISTICS
400
TJ = 125°C
200
25°C
100
80
60
40
0.004 0.006 0.01
0.02 0.03 0.05 0.07 0.1
- 55°C
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
MPS390
VC4E = 1.0 V
VCE = 10 V
5.0 7.0 10
20 30
50 70 100
1.0
MPS3904
TJ = 25°C
0.8
0.6
IC = 1.0 mA 10 mA
50 mA 100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
5.0 10 20
Figure 9. Collector Saturation Region
100
TA = 25°C
PULSE WIDTH = 300 ms
80 DUTY CYCLE ≤ 2.0%
60
40
20
IB = 500 mA
400 mA
300 mA
200 mA
100 mA
0
0 5.0 10 15 20 25 30 35
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 10. Collector Characteristics
1.4
TJ = 25°C
1.2
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
0
0.1
VCE(sat) @ IC/IB = 10
0.2 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltages
50 100
1.6
*APPLIES for IC/IB ≤ hFE/2
0.8
*qVC for VCE(sat)
0
25°C to 125°C
- 55°C to 25°C
- 0.8
25°C to 125°C
- 1.6
qVB for VBE
- 55°C to 25°C
- 2.4
0.1 0.2
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
50 1
Figure 12. Temperature Coefficients
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