MMBT2907AL Datasheet, PDF (4/6 Pages) ON Semiconductor – General Purpose Transistors

MMBT2907AL, SMMBT2907AL
TYPICAL SMALL−SIGNAL Characteristics
NOISE FIGURE
V_CE = 10 Vdc, T_A = 25°C
10
10
f = 1.0 kHz
8.0
8.0
6.0
I_C = -1.0 mA, R_s = 430 W
6.0
-500 mA, R_s = 560 W
-50 mA, R_s = 2.7 kW
4.0
-100 mA, R_s = 1.6 kW
4.0
2.0
R_s = OPTIMUM SOURCE RESISTANCE
2.0
I_C = -50 mA
-100 mA
-500 mA
-1.0 mA
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (kHz)
Figure 7. Frequency Effects
50 100
0
50 100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k
R_s, SOURCE RESISTANCE (OHMS)
Figure 8. Source Resistance Effects
30
20
C_eb
10
7.0
5.0
C_cb
3.0
2.0
-0.1 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
400
300
200
100
80
V_CE = -20 V
60
T_J = 25°C
40
30
20
-1.0 -2.0
-5.0 -10 -20 -50 -100 -200
I_C, COLLECTOR CURRENT (mA)
-500 -1000
Figure 10. Current−Gain − Bandwidth Product
1
I_C/I_B = 10
0.1
25°C
150°C
−55°C
0.01
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.0 I_C/I_B = 10
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
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