MJL3281A Datasheet, PDF (4/5 Pages) Motorola, Inc – 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS

10
T_J = 25°C
1.0
MJL3281A (NPN) MJL1302A (PNP)
TYPICAL CHARACTERISTICS
PNP MJL1302A
10
T_J = 25°C
NPN MJL3281A
V_CE = 5 V (DASHED)
V_CE = 20 V (SOLID)
1.0
V_CE = 5 V (DASHED)
V_CE = 20 V (SOLID)
0.1
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 7. Typical Base−Emitter Voltage
0.1
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 8. Typical Base−Emitter Voltage
10000
PNP MJL1302A
C_ib
10000
NPN MJL3281A
C_ib
1000
C_ob
1000
C_ob
T_J = 25°C
f_test = 1 MHz
100
0.1
1.0
10
100
V_R, REVERSE VOLTAGE (VOLTS)
Figure 9. MJL1302A Typical Capacitance
T_J = 25°C
f_test = 1 MHz
100
0.1
1.0
10
100
V_R, REVERSE VOLTAGE (VOLTS)
Figure 10. MJL3281A Typical Capacitance
100
10
1.0
0.1
1.0
10 ms
50 ms
1 sec
250 ms
10
100
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I_C − V_CE lim-
its of the transistor that must be observed for reliable opera-
tion; i.e., the transistor must not be subjected to greater dissip-
ation than the curves indicate.
The data of Figure 11 is based on T_J(pk) = 150°C; T_C is vari-
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second break-
down.
1000
Figure 11. Active Region Safe Operating Area
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