MJL21193 Datasheet, PDF (4/6 Pages) Motorola, Inc – 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS

MJL21193 (PNP), MJL21194 (NPN)
3.0
2.5 ^{TJ = 25°C}
I_C/I_B = 10
2.0
1.5
PNP MJL21193
TYPICAL CHARACTERISTICS
1.4
1.2 ^{TJ = 25°C}
I_C/I_B = 10
1.0
0.8
0.6
NPN MJL21194
V_BE(sat)
1.0
V_BE(sat)
0.5
V_CE(sat)
0
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 9. Typical Saturation Voltages
0.4
0.2
V_CE(sat)
0
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 10. Typical Saturation Voltages
10
T_J = 25°C
PNP MJL21193
1.0
V_CE = 20 V (SOLID)
V_CE = 5 V (DASHED)
10
T_J = 25°C
NPN MJL21194
V_CE = 20 V (SOLID)
1.0
V_CE = 5 V (DASHED)
0.1
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 11. Typical Base−Emitter Voltage
0.1
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 12. Typical Base−Emitter Voltage
100
1 SEC
10
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I_C − V_CE lim-
its of the transistor that must be observed for reliable opera-
tion; i.e., the transistor must not be subjected to greater dissip-
ation than the curves indicate.
1.0
The data of Figure 13 is based on T_J(pk) = 150°C; T_C is vari-
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
0.1
1.0
10
to values less than the limitations imposed by second break-
down.
100
1000
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
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